Quantitative dynamic near-field microscopy of thermal conductivityALTES, A; HEIDERHOFF, R; BALK, L. J et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 6, pp 952-963, issn 0022-3727, 12 p.Article

A universal scanning-probe-microscope-based hybrid systemJOACHIMSTHALER, I; HEIDERHOFF, R; BALK, L. J et al.Measurement science & technology (Print). 2003, Vol 14, Num 1, pp 87-96, issn 0957-0233, 10 p.Article

Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniquesFAKHRI, M; GEINZER, A.-K; HEIDERHOFF, R et al.Microelectronics and reliability. 2010, Vol 50, Num 9-11, pp 1459-1463, issn 0026-2714, 5 p.Conference Paper

Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigationsPUGATSCHOW, A; HEIDERHOFF, R; BALK, L. J et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1529-1533, issn 0026-2714, 5 p.Conference Paper

Scanning near-field acoustic study of ferroelectric BaTiO₃ceramicsLIU, X. X; HEIDERHOFF, R; ABICHT, H. P et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 1, pp 74-87, issn 0022-3727Article

Quantitative thermal conductivity measurements with nanometre resolutionFIEGE, G. B. M; ALTES, A; HEIDERHOFF, R et al.Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 5, pp L13-L17, issn 0022-3727Article

Dynamic Near-Field Scanning Thermal Microscopy on thin filmsHEIDERHOFF, R; LI, H; RIEDL, T et al.Microelectronics and reliability. 2013, Vol 53, Num 9-11, pp 1413-1417, issn 0026-2714, 5 p.Conference Paper

Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigationsTIEDEMANN, A.-K; KURZ, K; FAKHRI, M et al.Microelectronics and reliability. 2009, Vol 49, Num 9-11, pp 1165-1168, issn 0026-2714, 4 p.Conference Paper

Ferroelectric domain structures in (Pb, La)(Zr, Ti)O₃ ceramics observed by scanning force microscopy in acoustic modeYIN, Q. R; LI, G. R; ZENG, H. R et al.Applied physics. A, Materials science & processing (Print). 2004, Vol 78, Num 5, pp 699-702, issn 0947-8396, 4 p.Article

Dynamic characterization of ferroelectric domains of BaTiO₃by scanning near-field acoustic microscopyLIU, X. X; HEIDERHOFF, R; ABICHT, H. P et al.Materials chemistry and physics. 2002, Vol 75, Num 1-3, pp 125-130, issn 0254-0584Article

Erbium-doped titania xerogel films processed on porous anodic aluminaSERGEEV, O. V; GAPONENKO, N. V; STEPANOVA, E. A et al.International symposium on aluminium surface science and technology. 2000, pp 548-552Conference Paper

Characterization of electronic materials and devices by scanning near-field microscopyBALK, L. J; HEIDERHOFF, R; PHANG, J. C. H et al.Applied physics. A, Materials science & processing (Print). 2007, Vol 87, Num 3, pp 443-449, issn 0947-8396, 7 p.Article

Electron-beam-induced potentials in semiconductors: calculation and measurement with an SEM/SPM hybrid systemTHOMAS, Ch; JOACHIMSTHALER, I; HEIDERHOFF, R et al.Journal of physics. D, Applied physics (Print). 2004, Vol 37, Num 20, pp 2785-2794, issn 0022-3727, 10 p.Article

Optical and structural characterization of erbium-doped TiO₂xerogel films processed on porous anodic aluminaGAPONENKO, N. V; SERGEEV, O. V; STEPANOVA, E. A et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 2, pp H13-H16, issn 0013-4651Article

Near-field detection cathodoluminescence investigationsCRAMER, R. M; EBINGHAUS, V; HEIDERHOFF, R et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 15, pp 1918-1922, issn 0022-3727Article

Scanning near-field optical microscopy analyses of electronic devicesCRAMER, R. M; SCHADE, W. R; HEIDERHOFF, R et al.Microelectronics and reliability. 1998, Vol 38, Num 6-8, pp 963-968, issn 0026-2714Conference Paper

Nanoscopic evaluation of semiconductor properties by scanning probe microscopiesBALK, L. J; HEIDERHOFF, R; KOSCHINSKI, P et al.Microelectronics and reliability. 1996, Vol 36, Num 11-12, pp 1767-1774, issn 0026-2714Conference Paper

MPCVD diamond deposition on bias pretreated porous siliconSPITZL, R; RAIKO, V; HEIDERHOFF, R et al.Diamond and related materials. 1995, Vol 4, Num 5-6, pp 563-568, issn 0925-9635Conference Paper